Vertically oriented GaN-based air-gap distributed Bragg reflector structure fabricated using band-gap-selective photoelectrochemical etching
Publication information:
Sharma, ED Haberer, Meier, Hu, and Nakamura. (August) 2005. “Vertically Oriented GaN-Based Air-Gap Distributed Bragg Reflector Structure Fabricated Using Band-Gap-Selective Photoelectrochemical Etching”. APPLIED PHYSICS LETTERS 87. doi:10.1063/1.2008380.