Removal of thick (> 100 nm) InGaN layers for optical devices using band-gap-selective photoelectrochemical etching
Publication information:
Haberer, ED, Sharma, AR Stonas, Nakamura, SP DenBaars, and Hu. (August) 2004. “Removal of Thick (> 100 Nm) InGaN Layers for Optical Devices Using Band-Gap-Selective Photoelectrochemical Etching”. APPLIED PHYSICS LETTERS 85: 762-64. doi:10.1063/1.1776615.