Optimization of AlGaN/GaN current aperture vertical electron transistor (CAVET) fabricated by photoelectrochemical wet etching
Publication information:
Gao, Ben-Yaacov, UK Mishra, and Hu. (December) 2004. “Optimization of AlGaN GaN Current Aperture Vertical Electron Transistor (CAVET) Fabricated by Photoelectrochemical Wet Etching”. JOURNAL OF APPLIED PHYSICS 96: 6925-27. doi:10.1063/1.1806281.