n-AlGaAs/p-GaAs/n-GaN heterojunction bipolar transistor wafer-fused at 550-750 degrees C
Publication information:
Estrada, Huntington, Stonas, Xing, Mishra, DenBaars, Coldren, and Hu. (July) 2003. “N-AlGaAs/P-GaAs/N-GaN/Heterojunction/Bipolar/Transistor/Wafer-Fused/at/550-750/Degrees/C”. APPLIED PHYSICS LETTERS 83: 560-62. doi:10.1063/1.1592887.