Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth
Publication information:
Chichibu, SF, Marchand, MS Minsky, Keller, PT Fini, JP Ibbetson, SB Fleischer, et al. (March) 1999. “Emission Mechanisms of Bulk GaN and InGaN Quantum Wells Prepared by Lateral Epitaxial Overgrowth”. APPLIED PHYSICS LETTERS 74: 1460-62. doi:10.1063/1.123581.