Citation:
Chichibu, SF, H Marchand, MS Minsky, S Keller, PT Fini, JP Ibbetson, SB Fleischer, et al. 1999. “Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth.” APPLIED PHYSICS LETTERS 74: 1460-1462.
9 Oxford St, Room 222, Cambridge, MA 02138
Contact