AlGaN/GaN current aperture vertical electron transistors fabricated by photoelectrochemical wet etching
Publication information:
Gao, AR Stonas, Ben-Yaacov, Mishra, SP DenBaars, and Hu. (January) 2003. “AlGaN/GaN/Current/Aperture/Vertical/Electron/Transistors/Fabricated/by/Photoelectrochemical/Wet/Etching”. ELECTRONICS LETTERS 39: 148-49. doi:10.1049/el:20030018.