2.5 lambda microcavity InGaN light-emitting diodes fabricated by a selective dry-etch thinning process
Publication information:
Choi, Yong-Seok, Michael Iza, Elison Matioli, Gregor Koblmueller, James Speck, Claude Weisbuch, and Evelyn Hu. (August) 2007. “2.5 Lambda Microcavity InGaN Light-Emitting Diodes Fabricated by a Selective Dry-Etch Thinning Process”. APPLIED PHYSICS LETTERS 91. doi:10.1063/1.2769397.