@article { ISI:000184186700052,
	title = {n-AlGaAs/p-GaAs/n-GaN heterojunction bipolar transistor wafer-fused at 550-750 degrees C},
	journal = {APPLIED PHYSICS LETTERS},
	volume = {83},
	year = {2003},
	month = {JUL 21},
	pages = {560-562},
	issn = {0003-6951},
	doi = {10.1063/1.1592887},
	author = {Estrada, S and Huntington, A and Stonas, A and Xing, H and Mishra, U and DenBaars, S. and Coldren, L and Hu, E.}
}
