@article { ISI:000222969200022,
	title = {Removal of thick (> 100 nm) InGaN layers for optical devices using band-gap-selective photoelectrochemical etching},
	journal = {APPLIED PHYSICS LETTERS},
	volume = {85},
	year = {2004},
	month = {AUG 2},
	pages = {762-764},
	issn = {0003-6951},
	doi = {10.1063/1.1776615},
	author = {Haberer, ED and Sharma, R and Stonas, AR and Nakamura, S. and DenBaars, SP and Hu, E. L.}
}
