@article { ISI:000079011500036,
	title = {Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth},
	journal = {APPLIED PHYSICS LETTERS},
	volume = {74},
	year = {1999},
	month = {MAR 8},
	pages = {1460-1462},
	issn = {0003-6951},
	doi = {10.1063/1.123581},
	author = {Chichibu, SF and Marchand, H and Minsky, MS and Keller, S and Fini, PT and Ibbetson, JP and Fleischer, SB and Speck, J. S. and Bowers, JE and Hu, E. and Mishra, UK and DenBaars, SP and Deguchi, T and Soto, T and Nakamura, S.}
}
