@article {622721, title = {Selective Purcell enhancement of two closely linked zero-phonon transitions of a silicon carbide color center}, journal = {Proceedings of the National Academy of Sciences}, volume = {114 }, number = {16}, year = {2017}, pages = {4060-4065}, abstract = {Point defects in silicon carbide are rapidly becoming a platform of great interest for single-photon generation, quantum sensing, and quantum information science. Photonic crystal cavities (PCCs) can serve as an efficient light{\textendash}matter interface both to augment the defect emission and to aid in studying the defects{\textquoteright} properties. In this work, we fabricate 1D nanobeam PCCs in 4H-silicon carbide with embedded silicon vacancy centers. These cavities are used to achieve Purcell enhancement of two closely spaced defect zero-phonon lines (ZPL). Enhancements of \>80-fold are measured using multiple techniques. Additionally, the nature of the cavity coupling to the different ZPLs is examined.}, url = {http://www.pnas.org/content/114/16/4060.short}, author = {Bracher, David O. and Zhang, Xingyu and Hu, Evelyn L.} }