Citation:
Estrada, S, A Huntington, A Stonas, H Xing, U Mishra, S DenBaars, L Coldren, and E Hu. 2003. “n-AlGaAs/p-GaAs/n-GaN heterojunction bipolar transistor wafer-fused at 550-750 degrees C.” APPLIED PHYSICS LETTERS 83: 560-562.
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