Publications
High Extraction Efficiency GaN-Based Photonic-Crystal Light-Emitting Diodes: Comparison of Extraction Lengths between Surface and Embedded Photonic Crystals
Appl. Phys. Express 3, 032103 (2010).
Ambient pressure, low-temperature synthesis and characterization of colloidal InN nanocrystals
J. Mat. Chem. 20, 1435 (2010).
High extraction efficiency light-emitting diodes based on embedded air-gap photonic-crystal
Appl. Phys. Lett. 96, 031108 (2010).
Interplay of cavity thickness and metal absorption in thin-film InGaN photonic crystal light-emitting diodes
Appl. Phys. Lett. 97, 061118 (2010).
Measurement of extraction and absorption parameters in GaN-based photonic-crystal light-emitting diodes
J. Appl. Phys. 107, 053114 (2010).
Gap-mode plasmonic nanocavity
Appl. Phys. Lett. 97, 163115 (2010).
GaN-based embedded 2D photonic crystal LEDs: Numerical optimization and device characterization
Physica Status Solidi (c) 6, S675 (2009).
Explanation of Photon Correlations in the Far-Off-Resonance Optical Emission from a Quantum-DotCavity System
Phys. Rev. Lett. 103, 207403 (2009).
Enhanced photogenerated carrier collection in hybrid films of bio-templated gold nanowires and nanocrystalline CdSe
Nanotechnology 20, None (2009).
Photoelectrochemical Undercut Etching of m-Plane GaN for Microdisk Applications
J. Electrochem. Soc. 156, H767-H771 (2009).
Observation of whispering gallery modes in nonpolar m-plane GaN microdisks
Appl. Phys. Lett. 94, None (2009).
Photoelectrochemical etching of p-type GaN heterostructures
Appl. Phys. Lett. 94, None (2009).
Smooth Top-Down Photoelectrochemical Etching of m-Plane GaN
J. Electrochem. Soc. 156, H47-H51 (2009).
GaN/InGaN light emitting diodes with embedded photonic crystal obtained by lateral epitaxial overgrowth
Appl. Phys. Lett. 92, 113514 (2008).
Quantum Dot Spectroscopy Using Cavity Quantum Electrodynamics
Phys. Rev. Lett. 101, 226808 (2008).
Cavity QED effects with single quantum dots
COMPTES RENDUS PHYSIQUE 9, 850 (2008).
Directional emission control and increased light extraction in GaN photonic crystal light emitting diodes
Appl. Phys. Lett. 93, None (2008).
Quantum nature of a strongly coupled single quantum dot-cavity system
Nature 445, 896 (2007).
Evolution of the onset of coherence in a family of photonic crystal nanolasers
Appl. Phys. Lett. 91, 031108 (2007).
Room-temperature continuous-wave lasing in GaN//InGaN microdisks
Nat Photon 1, 61 (2007).
Observation of whispering gallery modes in nanocrystalline diamond microdisks
Appl. Phys. Lett. 90, 081110 (2007).
Wavelength- and material-dependent absorption in GaAs and AlGaAs microcavities
Appl. Phys. Lett. 90, 051108 (2007).
Synthesis, characterization, and optical properties of ordered arrays of III-nitride nanocrystals
NANO LETTERS 7, 3512 (2007).
Fabrication and characterization of two-dimensional photonic crystal microcavities in nanocrystalline diamond
Appl. Phys. Lett. 91, None (2007).
Gallium-nitride-based microcavity light-emitting diodes with air-gap distributed Bragg reflectors
Appl. Phys. Lett. 91, None (2007).
2.5 lambda microcavity InGaN light-emitting diodes fabricated by a selective dry-etch thinning process
Appl. Phys. Lett. 91, None (2007).
Fabrication of suspended single crystal diamond devices by electrochemical etch
J. Vac. Sci. Technol. B 25, 730 (2007).
Dispersive phase response in optical waveguide-resonator system
Appl. Phys. Lett. 90, None (2007).
Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution
Appl. Phys. Lett. 88, 061124 (2006).
Tuning photonic nanocavities by atomic force microscope nano-oxidation
Appl. Phys. Lett. 89, 041118 (2006).
Frequency control of photonic crystal membrane resonators by monolayer deposition
Appl. Phys. Lett. 88, 043116 (2006).
Visible resonant modes in GaN-based photonic crystal membrane cavities
Appl. Phys. Lett. 88, 031111 (2006).
Self-Tuned Quantum Dot Gain in Photonic Crystal Lasers
Phys. Rev. Lett. 96, 127404 (2006).
Programmable assembly of nanoarchitectures using genetically engineered viruses
Nano Lett 5, 1429 (2005).
Deterministic Coupling of Single Quantum Dots to Single Nanocavity Modes
Science 308, 1158 (2005).
GaN blue photonic crystal membrane nanocavities
Appl. Phys. Lett. 87, 243101 (2005).
Vertically oriented GaN-based air-gap distributed Bragg reflector structure fabricated using band-gap-selective photoelectrochemical etching
Appl. Phys. Lett. 87, None (2005).
Photonic bands in two-dimensionally patterned multimode GaN waveguides for light extraction
Appl. Phys. Lett. 87, None (2005).
Photon statistics from coupled quantum dots
Phys. Rev. Lett. 95, None (2005).
Activated 3-dimensional titania nanostructures for optoelectronic and photonic applications.
ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY 228, 011-AEI (2004).
Free-standing, optically pumped, GaN/InGaN microdisk lasers fabricated by photoelectrochemical etching
Appl. Phys. Lett. 85, 5179 (2004).
Optimization of AlGaN/GaN current aperture vertical electron transistor (CAVET) fabricated by photoelectrochemical wet etching
J. Appl. Phys. 96, 6925 (2004).
Dye-activated hybrid organic/inorganic mesostructured titania waveguides
J. Am. Chem. Soc. 126, 10826 (2004).
Removal of thick (> 100 nm) InGaN layers for optical devices using band-gap-selective photoelectrochemical etching
Appl. Phys. Lett. 85, 762 (2004).
InP photonic crystal membrane structures: Fabrication accuracy and optical performance
Appl. Phys. Lett. 85, 522 (2004).
Roughening hexagonal surface morphology on laser lift-off (LLO) N-face GaN with simple photo-enhanced chemical wet etching
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 43, L637-L639 (2004).
Dislocation- and crystallographic-dependent photoelectrochemical wet etching of gallium nitride
Appl. Phys. Lett. 84, 3322 (2004).
Fabrication of InP-based two-dimensional photonic crystal membrane
J. Vac. Sci. Technol. B 22, 70 (2004).
Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening
Appl. Phys. Lett. 84, 855 (2004).
Square-lattice photonic crystal microcavities for coupling to single InAs quantum dots
Appl. Phys. Lett. 83, 3650 (2003).
Cavity-quantum electrodynamics with quantum dots
J. Opt. B: Quantum Semiclass. Opt. 5, 129 (2003).
AlGaN/GaN current aperture vertical electron transistors fabricated by photoelectrochemical wet etching
Electron. Lett. 39, 148 (2003).
Coherent coupling dynamics in a quantum-dot microdisk laser
Phys. Rev. B 66, None (2002).
High-resolution in situ electron beam patterning using Ti(OC3H7)(4) as a negative-type resist
J. Vac. Sci. Technol. B 20, 596 (2002).
Interface of directly bonded InP wafers for vertical couplers
Appl. Phys. Lett. 80, 1346 (2002).
Photoelectrochemical undercut etching for fabrication of GaN microelectromechanical systems
J. Vac. Sci. Technol. B 19, 2838 (2001).
Small-signal frequency response of long-wavelength vertical-cavity lasers
IEEE PHOTONICS TECHNOLOGY LETTERS 13, 1049 (2001).
Enhanced diffusion as a mechanism for ion-induced damage propagation in GaN
J. Vac. Sci. Technol. B 19, 603 (2001).
Spin coherence and dephasing in GaN
Phys. Rev. B 63, 121202 (2001).
Selection of peptides with semiconductor binding specificity for directed nanocrystal assembly
Nature 405, 665 (2000).
Radiative lifetimes of spatially indirect excitons in type-II GaSb/GaAs self-assembled quantum dots
COMPOUND SEMICONDUCTORS 1998 None, 475 (1999).
High-transconductance self-aligned AlGaN/GaN modulation-doped field-effect transistors with regrown ohmic contacts
Appl. Phys. Lett. 73, 3147 (1998).
Double-fused 1.52-µm vertical-cavity lasers
Appl. Phys. Lett. 66, 1030 (1995).
Anomalous Andreev conductance in InAs-AlSb quantum well structures with Nb electrodes
Phys. Rev. Lett. 69, 2847 (1992).
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